Monte Carlo Simulations of Spin Transport in a Strained Nanoscale InGaAs Field Effect Transistor

摘要

Spin-based logic devices could operate at very high speed with very lowenergy consumption and hold significant promise for quantum informationprocessing and metrology. Here, an in-house developed, experimentally verified,ensemble self-consistent Monte Carlo device simulator with a Bloch equationmodel using a spin-orbit interaction Hamiltonian accounting for Dresselhaus andRashba couplings is developed and applied to a spin field effect transistor(spinFET) operating under externally applied voltages on a gate and a drain. Inparticular, we simulate electron spin transport in a \SI{25}{nm} gate length\chem{In_{0.7}Ga_{0.3}As} metal-oxide-semiconductor field-effect transistor(MOSFET) with a CMOS compatible architecture. We observe non-uniform decay ofthe net magnetization between the source and gate and a magnetization recoveryeffect due to spin refocusing induced by a high electric field between the gateand drain. We demonstrate coherent control of the polarization vector of thedrain current via the source-drain and gate voltages, and show that themagnetization of the drain current is strain-sensitive and can be increasedtwofold by strain induced into the channel.